Success Story: EB2 NIW Approval for a Senior Hardware Development Engineer in the field of Electrical Engineering in 5 weeks

Client’s Testimonial:

Thanks for the great effort! I'll definitely refer my friends to you.


On September 11th, 2013, we received another EB-2 NIW (National Interest Waiver) Approval for a Senior Hardware Development Engineer in the field of Electrical Engineering (Approval Notice)


General Field: Electrical Engineering Position at the Time of Case Filing: Senior Hardware Development Engineer Country of Origin: Taiwan Service Center: Nebraska Service Center (NSC) State of Residence at the Time of Filing:  California Approval Notice Date: September 11, 2013 Processing Time:  5 weeks


Case Summary:

The average processing time for I-140 cases is 4-6 months. But on many occasions, we have cases approved far faster than the average processing time.

Another exceptional client that North America Immigration Law Group – WeGreened.com had the pleasure of working with was a senior hardware development engineer from Taiwan working in the field of electrical engineering.  His work had focused specifically on the development of photonic integrated circuits and high-speed nano-scale electronic devices. We at North America Immigration Law Group – WeGreened.com demonstrated that his continued employment in the field would not only benefit those in his field, but the citizens of the United States at large. To achieve success in this case, we submitted extensive documentation proving our client’s highly significant contributions to the field of electrical engineering, including at least 8 peer-reviewed journal articles and conference papers/presentations. His publications had been cited at least 50 times at the time of case filing.  Of his accomplishments, one of the independent recommenders remarked: “[Client] works within the High Speed Integrated Circuits research group. His projects with the group have garnered funding from leading world consortiums . . . [Client] was able to demonstrate the first inversion-channel enhancement-mode GaAs channel MOSFET, utilizing a regrowth source/drain process. Beyond this, [client] has fabricated 90nm gate length high electron mobility InGaAs FETs with double the performance of 90nm Si CMOS (complimentary metal-oxide-semiconductor).” Through extensive documentation, we at North America Immigration Law Group – WeGreened.com successfully argued that our client would serve the national interest to a significantly greater degree than others with similar education and experience. His NIW application was approved just 5 weeks.